SavantIC Semiconductor Product Specification 2SD1828 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1226 ·High DC current gain. ·Large current capacity and wide ASO. ·DARLINGTON APPLICATIONS ·Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A ICM Collector current-peak 5 A PC Collector dissipation TC=25 20 W 2 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1828 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 110 V V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=< 100 V VCEsat Collector-emitter saturation voltage IC=1.5A ; IB=3mA VBEsat Base-emitter saturation voltage ICBO 1.5 V IC=1.5A ; IB=3mA 2.0 V Collector cut-off current VCB=80V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V;IC=0 3.0 mA hFE DC current gain IC=1.5A ; VCE=3V Transition frequency IC=1.5A ; VCE=5V fT 0.9 1500 4000 20 MHz 0.8 µs 5.0 µs 1.2 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=500IB1=-500IB2=1A VCC=50V ,RL=50D 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD1828