SavantIC Semiconductor Product Specification 2SC2774 Silicon NPN Power Transistors DESCRIPTION ·With MT-200 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 17 A IB Base current 5 A PC Collector power dissipation 200 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC2774 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=200V; IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain IC=5A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 300 pF fT Transition frequency IC=2A ; VCE=12V 20 MHz VCEsat CONDITIONS hFE classifications O Y 50-100 70-140 2 MIN TYP. 50 MAX UNIT 140 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC2774