Inchange Semiconductor Product Specification 2SC2773 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・High current capability APPLICATIONS ・For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 15 A IB Base current 5 A PC Collectorl power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2773 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V Collector-emitter saturation voltage IC=10 A;IB=1 A 3.0 V ICBO Collector cut-off current VCB=200V; IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=4V fT Transition frequency IC=0.5A ; VCE=12V 20 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 250 pF VCEsat CONDITIONS hFE classifications O P Y 50-100 70-140 90-180 2 MIN TYP. 50 MAX UNIT 180 Inchange Semiconductor Product Specification 2SC2773 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3