SavantIC Semiconductor Product Specification 2SC4278 Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·Complement to type 2SA1633 ·High current and high power capability APPLICATIONS ·For audio output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 10 A PD Total power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC4278 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=1A ; VCE=10V fT CONDITIONS hFE Classifications D E F 60-120 100-200 160-320 2 MIN TYP. MAX 150 UNIT V 60 320 20 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC4278