SavantIC Semiconductor Product Specification 2SC2898 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage,high speed ·High power switching · PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 8 A ICM Collector current-Peak 16 A IB Base current 4 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC2898 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; L=100mH V(BR) EBO Emitter-base breakdown voltage IE=10mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=4.0A; IB=0.8A(pulse test) 1.0 V VBEsat Base-emitter saturation voltage IC=4.0A; IB=0.8A(pulse test) 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 50 µA ICEO Collector cut-off current VCE=350V; RBE=> 50 µA hFE-1 DC current gain IC=4A ; VCE=5V(pulse test) 15 hFE-2 DC current gain IC=8A ; VCE=5V(pulse test) 7 400 V 7 V Switching times ton Turn-on time ts Storage time tf Fall time 0.8 IC=8A, IB1=-IB2=1.6A VCC@150V 2 µs 2.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3 2SC2898 SavantIC Semiconductor Product Specification 2SC2898 Silicon NPN Power Transistors 4