SavantIC Semiconductor Product Specification 2SC3577 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High breakdown voltage ·High speed APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 650 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 3 A PC Collector power dissipation TC=25 80 Ta=25 3 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3577 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A;L=50mH VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V ICES Collector cut-off current VCB=800V; VBE=0 50 µA IEBO Emitter cut-off current VEB=7V; IC=0 50 µA hFE-1 DC current gain IC=10mA ; VCE=5V 10 hFE-2 DC current gain IC=3A ; VCE=5V 6 Transition frequency IC=0.5A ; VCE=5V fT CONDITIONS MIN TYP. MAX 650 UNIT V 6 MHz Switching times ton Turn-on time tstg Storage time tf IC=3A; VCC=250V IB1=0.6A;IB2=-1.2A Fall time 2 1.0 µs 2.5 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 2SC3577