SAVANTIC 2SC4559

SavantIC Semiconductor
Product Specification
2SC4559
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High speed switching
·High VCEO
APPLICATIONS
·For high breakdown voltage ,high-speed
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
7
A
ICM
Collector current-Peak
15
A
IB
Base current
3
A
PC
Collector power dissipation
TC=25
40
W
Ta=25
2
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC4559
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA , IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
10
hFE-2
DC current gain
IC=3A ; VCE=5V
8
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
fT
CONDITIONS
MIN
TYP.
MAX
400
UNIT
V
5.5
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A; IB1=0.6A
IB2=-1.2A;VCC=150V
2
1.0
µs
3.0
µs
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
2SC4559
SavantIC Semiconductor
Product Specification
2SC4559
Silicon NPN Power Transistors
4