SavantIC Semiconductor Product Specification 2SC3164 Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 10 A IB Base current 4 A PD Total power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.25 /W SavantIC Semiconductor Product Specification 2SC3164 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V At rated voltage 0.1 mA 0.1 mA ICBO CONDITIONS TYP. MAX 400 UNIT V Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated voltage hFE DC current gain IC=5A ; VCE=2V Transition frequency IC=1A ; VCE=10V fT MIN 10 20 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=5A;IB1=1A; IB2=2A , RL=30A VBB2=4V 2 0.3 µs 1.0 µs 0.1 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC3164