SavantIC Semiconductor Product Specification 2SC4055 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage,High speed switching ·High reliability PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 4 A IBM Base current-peak 8 A PC Collector dissipation 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 2.08 /W SavantIC Semiconductor Product Specification 2SC4055 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current At rated voltage 0.1 mA ICEO Collector cut-off current At rated voltage 0.1 mA IEBO Emitter cut-off current At rated voltage 0.1 mA hFE-1 DC current gain IC=4A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 5 Transition frequency IC=0.8A ; VCE=10V fT CONDITIONS MIN TYP. MAX 450 UNIT V 20 MHz Switching times Ton Turn-on time tstg Storage time tf IC=4A;IB1=0.8A; IB2=1.6A;RL=37.5C VBB2=4V Fall time 2 0.5 µs 2.0 µs 0.2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC4055