Inchange Semiconductor Product Specification 2SC4060 Silicon NPN Power Transistors · DESCRIPTION ·With TO-247 package ·Switching power transistor ·High voltage,high speed PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VCEX Collector-emitter voltage VEB=5V 600 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 20 A ICM Collector current-Peak 40 A IB Base current 7 A IBM Base current-Peak 14 A PD Total power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 0.83 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC4060 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 1.5 V At rated voltage 0.1 mA 0.1 mA ICBO CONDITIONS MIN MAX 450 UNIT V Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated voltage hFE-1 DC current gain IC=10A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 5 Transition frequency IC=2A ; VCE=10V fT TYP. 20 MHz Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=10A IB1=2A; IB2=4A VBB2=4V ,RL=15Ω 2 0.5 μs 2.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC4060 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3