Inchange Semiconductor Product Specification 2SC2833 2SC2833A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SC2833 VCBO Collector-base voltage VALUE UNIT 800 Open emitter 2SC2833A V 900 VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 5 A ICM Collector current-peak 10 A IB Base current (DC) 3 A PC Collector power dissipation Ta=25℃ 2.5 TC=25℃ 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2833 2SC2833A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH VCE(sat) Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.0 V VBE(sat) Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V 0.1 mA 0.1 mA 2SC2833 ICBO CONDITIONS MIN MAX 500 UNIT V VCB=800V; IE=0 Collector cut-off current 2SC2833A VCB=900V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT TYP. 3 MHz Switching times 2SC2833 ton 1.0 μs Turn-on time 2SC2833A ts 1.2 IC=3.0A; VCC=200V IB1=0.6A ,IB2=-0.6A Storage time 2SC2833 tf 3.0 μs 1.0 μs Fall time 1.2 2SC2833A 2 Inchange Semiconductor Product Specification 2SC2833 2SC2833A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3