ISC 2SC2833A

Inchange Semiconductor
Product Specification
2SC2833 2SC2833A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High speed switching
·High VCBO
·Low collector saturation voltage
APPLICATIONS
·For high speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC2833
VCBO
Collector-base voltage
VALUE
UNIT
800
Open emitter
2SC2833A
V
900
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current (DC)
5
A
ICM
Collector current-peak
10
A
IB
Base current (DC)
3
A
PC
Collector power dissipation
Ta=25℃
2.5
TC=25℃
70
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC2833 2SC2833A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;L=25mH
VCE(sat)
Collector-emitter saturation voltage
IC=3A ;IB=0.6A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.5
V
0.1
mA
0.1
mA
2SC2833
ICBO
CONDITIONS
MIN
MAX
500
UNIT
V
VCB=800V; IE=0
Collector
cut-off current
2SC2833A
VCB=900V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=3A ; VCE=5V
8
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
fT
TYP.
3
MHz
Switching times
2SC2833
ton
1.0
μs
Turn-on time
2SC2833A
ts
1.2
IC=3.0A; VCC=200V
IB1=0.6A ,IB2=-0.6A
Storage time
2SC2833
tf
3.0
μs
1.0
μs
Fall time
1.2
2SC2833A
2
Inchange Semiconductor
Product Specification
2SC2833 2SC2833A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3