Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO PARAMETER EM S E G N A H Collector-base voltage INC Collector-emitter voltage 2SC3298 2SC3298A D N O IC CONDITIONS Open emitter Emitter-base voltage VALUE 180 200 2SC3298 160 2SC3298A Open base UNIT 160 2SC3298B 2SC3298B VEBO R O T UC 180 V V 200 Open collector 5 V IC Collector current 1.5 A IB Base current 0.15 A PC Collector power dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3298 2SC3298A 2SC3298B Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC3298 V(BR)CEO Collector-emitter breakdown voltage 2SC3298A TYP. MAX UNIT 160 IC=10mA , IB=0 2SC3298B VCEsat MIN V 180 200 Collector-emitter saturation voltage IC=0.5A, IB=50mA 1.5 V VBE Base-emitter voltage IC=0.5A ,VCE=5V 1.0 V ICBO Collector cut-off current VCB=160V, IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE DC current gain IC=0.1A ; VCE=5V Cob Output capacitance fT 体 导 半 固电 A H C IN hFE Classifications O 70-140 IC=0.1A ; VCE=10V Y 120-240 2 240 R O T UC D N O IC IE=0 ; VCB=10V,f=1MHz EM S E NG Transition frequency 70 25 pF 100 MHz Inchange Semiconductor Product Specification 2SC3298 2SC3298A 2SC3298B Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3