SavantIC Semiconductor Product Specification 2SC3307 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Excellent switching times : tr=1.0µs(Max .),tf=1.0µs(Max .)(IC=5A) ·High collector breakdown voltage : VCEO=800V APPLICATIONS ·High speed,high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 3 A PC Collector power dissipation 150 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3307 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=10mA ; VCE=5V 10 hFE-2 DC current gain IC=5A ; VCE=5V 10 1.0 µs 3.0 µs 1.0 µs Switching times tr tstg tf Rise time Storage time IC=1A ; VCC?400V IB1=-IB2=0.4A Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 2SC3307 SavantIC Semiconductor Product Specification 2SC3307 Silicon NPN Power Transistors 4