SAVANTIC 2SC3627

SavantIC Semiconductor
Product Specification
2SC3627
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High collector breakdown voltage
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
IB
Base current
2
A
PC
Collector power dissipation
Ta=25
2.0
TC=25
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC3627
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
200
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
250
V
VCEsat
Collector-emitter saturation voltage
IC=5 A;IB=0.5 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5 A;IB=0.5 A
1.5
V
ICBO
Collector cut-off current
VCB=200V ;IE=0
100
µA
IEBO
Emitter cut-off current
VEB=7V ;IC=0
1
mA
hFE-1
DC current gain
IC=10mA ; VCE=5V
15
hFE-2
DC current gain
IC=5A ; VCE=5V
20
80
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
VCC:150V,RL=25=
IB1=-IB2=0.6 A
2
1.0
µs
2.5
µs
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
2SC3627