SavantIC Semiconductor Product Specification 2SC3627 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High collector breakdown voltage APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 2 A PC Collector power dissipation Ta=25 2.0 TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3627 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 250 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.5 A 1.0 V VBEsat Base-emitter saturation voltage IC=5 A;IB=0.5 A 1.5 V ICBO Collector cut-off current VCB=200V ;IE=0 100 µA IEBO Emitter cut-off current VEB=7V ;IC=0 1 mA hFE-1 DC current gain IC=10mA ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 20 80 Switching times tr Rise time ts Storage time tf Fall time VCC:150V,RL=25= IB1=-IB2=0.6 A 2 1.0 µs 2.5 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SC3627