SavantIC Semiconductor Product Specification 2SC3306 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Collector-emitter sustaining voltageVCEO(sus)=400V(Min) ·Fast switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current-DC 10 A ICM Collector current-peak 15 A IB Base current 5 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3306 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ,IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=400V; IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=5A ; VCE=5V 1.0 µs 2.5 µs 1.0 µs 10 Switching times tr tstg tf Rise time Storage time VCC=200V; IC=5.0A IB1=-IB2=0.5A;RL=40 < Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SC3306 SavantIC Semiconductor Product Specification 2SC3306 Silicon NPN Power Transistors 4