SAVANTIC 2SC3148

SavantIC Semiconductor
Product Specification
2SC3148
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High collector breakdown voltage:
VCEO=800V(Min)
·Excellent switching time:
tr=1.0µs(Max.)
tf=1.0µs([email protected]=0.8A
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
3
A
ICM
Collector current-peak
5
A
IB
Base current
1
A
PC
Collector dissipation
Ta=25
1.5
TC=25
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC3148
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
900
V
VCEsat
Collector-emitter saturation voltage
IC=0.8A; IB=0.16A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=0.8A; IB=0.16A
1.2
V
ICBO
Collector cut-off current
VCB=800V ;IE=0
100
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1
mA
hFE
DC current gain
IC=0.8A ; VCE=5V
1.0
µs
4.0
µs
1.0
µs
10
Switching times
tr
tstg
tf
Rise time
Storage time
[email protected]; IC=0.8A
IB1=0.08A;IB2=-0.20A;
RL=50B;Duty cycleD1%
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC3148
SavantIC Semiconductor
Product Specification
2SC3148
Silicon NPN Power Transistors
4