SavantIC Semiconductor Product Specification 2SC2535 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max. APPLICATIONS ·High speed high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A IB Base current 1 A PC Collector dissipation Ta=25 1.5 TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC2535 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 100 µA IEBO Emitter cut-off current VEB=6V; IC=0 1 mA hFE DC current gain IC=3A ; VCE=5V 1.0 µs 2.5 µs 1.0 µs 10 Switching times tr tstg tf Rise time Storage time VCC=200V; IB1=-IB2=0.3A;RL=68> Duty cycle@1% Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2535 SavantIC Semiconductor Product Specification 2SC2535 Silicon NPN Power Transistors 4