SavantIC Semiconductor Product Specification 2SC3559 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 3 A ICM Collector current-Peak 5 A IB Base current 1 A PC Collector power dissipation TC=25 30 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3559 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA , IE=0 900 V VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A 0.6 V VBEsat Base-emitter saturation voltage IC=0.8A; IB=0.16A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=0.8A ; VCE=5V 1.0 µs 4.0 µs 1.0 µs 10 Switching times tr Rise time ts Storage time tf Fall time IB1=0.08A; IB2=-0.2A VCC>400V; RL=500@ 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SC3559 SavantIC Semiconductor Product Specification 2SC3559 Silicon NPN Power Transistors 4