Inchange Semiconductor Product Specification 2SC3626 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak 10 A IB Base current 4 A PC Collector power dissipation Ta=25℃ 2.0 TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3626 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 500 V VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8 A 1.0 V VBEsat Base-emitter saturation voltage IC=4 A;IB=0.8 A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V ;IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V 10 1.0 μs 2.5 μs 1.0 μs Switching times tr Rise time ts Storage time tf Fall time VCC≈200V,RL=50Ω IC=4A ;IB1=-IB2=0.4 A 2 Inchange Semiconductor Product Specification 2SC3626 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3