ISC 2SC3460

Inchange Semiconductor
Product Specification
2SC3460
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High breakdown voltage and high reliability.
・Fast switching speed
・Wide area of safe operation
APPLICATIONS
・800V/6A switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
体
导
半
Absolute maximum ratings(Ta=℃)
固电
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
NG
PARAMETER
D
N
O
IC
R
O
T
UC
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
1100
V
Collector-emitter voltage
Open base
800
V
Emitter-base voltage
Open collector
7
V
A
H
C
IN
IC
Collector current
6
A
ICM
Collector current-peak
20
A
IB
Base current
3
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3460
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;RBE=∞
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
1100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.4A ; VCE=5V
10
hFE-2
DC current gain
IC=2A ; VCE=5V
8
Cob
fT
体
导
半
固电
IE=0 ; VCB=10V;f=1MHz
Transition frequency
IC=0.4A ; VCE=10V
‹
EM
S
E
G
N
A
H
ton
INC
tstg
Storage time
Turn-on time
IC=4A;RL=100Ω
IB1=0.8A; IB2=-1.6A
VCC=400V
Fall time
hFE-1 Classifications
K
L
M
10-20
15-30
20-40
2
MIN
TYP.
MAX
UNIT
40
R
O
T
UC
D
N
O
IC
Output capacitance
Switching times
tf
CONDITIONS
120
pF
15
MHz
0.5
μs
3.0
μs
0.3
μs
Inchange Semiconductor
Product Specification
2SC3460
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SC3460
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC