Inchange Semiconductor Product Specification 2SC3460 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage and high reliability. ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・800V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 Absolute maximum ratings(Ta=℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1100 V Collector-emitter voltage Open base 800 V Emitter-base voltage Open collector 7 V A H C IN IC Collector current 6 A ICM Collector current-peak 20 A IB Base current 3 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3460 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 1100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 2.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.4A ; VCE=5V 10 hFE-2 DC current gain IC=2A ; VCE=5V 8 Cob fT 体 导 半 固电 IE=0 ; VCB=10V;f=1MHz Transition frequency IC=0.4A ; VCE=10V EM S E G N A H ton INC tstg Storage time Turn-on time IC=4A;RL=100Ω IB1=0.8A; IB2=-1.6A VCC=400V Fall time hFE-1 Classifications K L M 10-20 15-30 20-40 2 MIN TYP. MAX UNIT 40 R O T UC D N O IC Output capacitance Switching times tf CONDITIONS 120 pF 15 MHz 0.5 μs 3.0 μs 0.3 μs Inchange Semiconductor Product Specification 2SC3460 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SC3460 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC