ISC 2SC3988

Inchange Semiconductor
Product Specification
2SC3988
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PN package
・High breakdown voltage high reliability.
・Wide area of safe operation
・Fast switching speed
APPLICATIONS
・500V/25A switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
体
导
半
Absolute maximum ratings(Ta=℃)
固电
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
D
N
O
IC
R
O
T
UC
VALUE
UNIT
Open emitter
800
V
Collector-emitter voltage
Open base
500
V
Emitter-base voltage
Open collector
7
V
EM
S
E
G
N
A
H
Collector-base voltage
INC
CONDITIONS
IC
Collector current
25
A
ICP
Collector current-peak
40
A
IB
Base current
8
A
PC
Collector power dissipation
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3988
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
800
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;RBE=∞
500
V
V(BR)EBO
Emitter-base breakdown voltage
IC=1mA ;IC=0
7
V
VCEX(SUS)
Collector-emitter sustaining voltage
IC=10A;IB1=-IB2=2A;
L=200μH
500
V
VCEsat
Collector-emitter saturation voltage
IC=12A; IB=2.4A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=12A; IB=2.4A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=2.4A ; VCE=5V
hFE-2
DC current gain
IC=12A ; VCE=5V
Cob
fT
体
导
半
固电
EM
S
E
NG
Output capacitance
Transition frequency
ton
A
H
C
IN
tstg
Storage time
Switching times
‹
D
N
O
IC
IE=0 ; VCB=10V;f=1MHz
IC=2.4A ; VCE=10V
Turn-on time
5IB1=-2.5IB2= IC=14A
VCC≈200V;RL=14.3Ω
Fall time
tf
hFE-1 Classifications
L
M
N
15-30
20-40
30-50
2
R
O
T
UC
15
8
50
260
pF
18
MHz
0.5
μs
3.0
μs
0.3
μs
Inchange Semiconductor
Product Specification
2SC3988
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SC3988
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC