SavantIC Semiconductor Product Specification 2SC4059 Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·High voltage;high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 15 A ICM Collector current-Peak 30 A IB Base current 6 A IBM Base current-Peak 12 A PD Total power dissipation 130 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 0.96 /W SavantIC Semiconductor Product Specification 2SC4059 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 VCEsat Collector-emitter saturation voltage IC=7.5A ;IB=1.5A 1.0 V VBEsat Base-emitter saturation voltage IC=7.5A ;IB=1.5A 1.5 V MAX At rated voltage 0.1 mA 0.1 mA 450 ICBO Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated voltage hFE-1 DC current gain IC=7.5A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 5 Transition frequency IC=1.5A ; VCE=10V fT TYP. UNIT V 20 MHz Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=7.5A IB1=1.5A; IB2=3.0A VBB2=4V ,RL=20C 2 0.5 µs 2.0 µs 0.2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC4059