Inchange Semiconductor Product Specification 2SD1024 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current-Continuous 8 A ICM Collector current-Peak 12 A IB Base current 0.5 A IBM Base current-Peak 1 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SD1024 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=5A; IB=6mA 1.5 V Base-emitter saturation voltage IC=5A; IB=6mA 2.0 V ICEO Collector cut-off current VCE=100V; IB=0 0.1 mA ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA hFE DC current gain IC=5A ; VCE=3V Transition frequency IC=0.8A ; VCE=10V fT CONDITIONS MIN TYP. 1500 30000 20 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=8A; IB1=IB2=8mA RL=3Ω;VBB2=4V 2 2 μs 5 μs 3 μs Inchange Semiconductor Product Specification 2SD1024 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3