Inchange Semiconductor Product Specification 2SB849A Silicon PNP Power Transistors · DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1110A ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -130 V VEBO Emitter-base voltage Open collector -7 V -7 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB849A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 40 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 340 pF fT Transition frequency IC=-0.2A ; VCE=-5V 14 MHz -130 UNIT V B B 2 MAX 200 Inchange Semiconductor Product Specification 2SB849A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3