ISC 2SB849A

Inchange Semiconductor
Product Specification
2SB849A
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SD1110A
·Wide area of safe operation
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-130
V
VCEO
Collector-emitter voltage
Open base
-130
V
VEBO
Emitter-base voltage
Open collector
-7
V
-7
A
80
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB849A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-50
μA
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
20
hFE -2
DC current gain
IC=-1A ; VCE=-5V
40
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
340
pF
fT
Transition frequency
IC=-0.2A ; VCE=-5V
14
MHz
-130
UNIT
V
B
B
2
MAX
200
Inchange Semiconductor
Product Specification
2SB849A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3