SAVANTIC 2SD1427

SavantIC Semiconductor
Product Specification
2SD1427
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PH package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in large screen color
deflection circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PH) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
5
A
2.5
A
80
W
IC
Collector current
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
MAX
UNIT
1.56
/W
SavantIC Semiconductor
Product Specification
2SD1427
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=200mA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
µA
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition freuqency
IC=0.1A ; VCE=10V;f=1MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
Diode forward voltage
IF=5A
2.0
V
Fall time
IC=4A;IB1=0.8A
1.0
µs
VF
tf
2
5
UNIT
V
8
3
MHz
165
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SD1427