SAVANTIC BU508D

SavantIC Semiconductor
Product Specification
BU508D
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage
·Built-in damper diode
APPLICATIONS
·For use in large screen colour
deflection circuits.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
5
A
ICM
Collector current (Pulse)
8
A
IB
Base current
2.5
A
PC
Collector power dissipation
125
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65-150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
BU508D
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=4.5A; IB=2.0A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A; IB=2.0A
1.5
V
hFE
DC current gain
IC=1A ; VCE=5V
ICES
Collector cut-off current
VCE=1500V; VBE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
300
mA
VF
Diode forward voltage
IF=4.0A
2.0
V
fT
Transition frequency
IC=0.1A ; VCE=5V
Cob
Collector capacitance
IE=0;VCB=10V;f=1MHz
ts
Storage time
tf
Fall time
700
UNIT
V
8
4
MHz
125
pF
7
µs
1.0
µs
IC=4.5A ; IB=1.4A
LB=10µH
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
BU508D