SAVANTIC 2SD1559

SavantIC Semiconductor
Product Specification
2SD1559
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SB1079
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
20
A
ICM
Collector current-peak
30
A
IB
Base current
3
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1559
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ,RBE==
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.1mA ,IE=0
100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA ,IC=0
7
V
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=20mA
2.0
V
VCEsat -2
Collector-emitter saturation voltage
IC=20A; IB=200mA
3.0
V
VBE sat-1
Base-emitter saturation voltage
IC=10A; IB=20mA
2.5
V
VBE sat-2
Base-emitter saturation voltage
IC=20A; IB=200mA
3.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
100
µA
ICEO
Collector cut-off current
VCE=80V; RBE==
1.0
mA
hFE
DC current gain
IC=10A ; VCE=3V
1000
MAX
UNIT
20000
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=10A; IB1=-IB2=20mA
Fall time
2
1.0
µs
9.0
µs
3.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SD1559