Inchange Semiconductor Product Specification 2SB1101 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1601 ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol 导体 半 电 固 SYMBOL VCBO VCEO VEBO M E S GE PARAMETER N A H INC Collector-base voltage Collector-emitter voltage Emitter-base voltage R O T UC D N O IC Absolute maximum ratings(Ta=25℃) CONDITIONS VALUE UNIT Open emitter -60 V Open base -60 V Open collector -7 V IC Collector current -4 A ICM Collector current-peak -8 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1101 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA ,IC=0 -7 V VCEsat -1 Collector-emitter saturation voltage IC=-2A; IB=-4mA -1.5 V VCEsat -2 Collector-emitter saturation voltage IC=-4A; IB=-40mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-2A; IB=-4mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-4A; IB=-40mA -3.5 V Collector cut-off current VCB=-60V; IE=0 -100 μA TOR μA 3.0 V ICBO ICEO hFE VD 导体 半 电 CONDITIONS 固 Collecto cut-off current IC M E ES G N A CH Diode forward voltage IN Switching times ton Turn-on time ts Storage time tf Fall time IC=-2A ; VCE=-3V TYP. C U D ON VCE=-50V; RBE=∞ DC current gain MIN 1000 ID=4A; IC=-2A IB1=-IB2=-4mA 2 MAX -10 UNIT 20000 0.8 μs 4.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SB1101 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3