SavantIC Semiconductor Product Specification 2SB765 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Complement to type 2SD864 APPLICATIONS ·For medium speed and power switching Applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -3 A ICM Collector current-peak -6 A PC Collector power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB765 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=> V(BR)EBO Emitter-base breakdown voltage IE=-50mA ,IC=0 VCEsat-1 Collector-emitter saturation voltage IC=-1.5A ,IB=-3mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-3A ,IB=-30mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-1.5A ,IB=-3mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-3A ,IB=-30mA -3.5 V ICBO Collector cut-off current VCB=-120V, IE=0 -100 µA ICEO Collector cut-off current VCE=-100V; RBE=> -10 µA hFE DC current gain IC=-1.5A ; VCE=-3V -120 V -7 V 1000 20000 Switching times ton Turn-on time tstg Storage time tf IC=-1.5A ;IB1=-IB2=-3mA Fall time 2 0.8 µs 3.0 µs 1.5 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB765