SavantIC Semiconductor Product Specification 2SD560 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB601 ·DARLINGTON APPLICATIONS ·Low frequency power amplifier ·Low speed switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 5 A ICM Collector current-Peak 8 A IB Base current 0.5 A PC Collector dissipation TC=25 30 W 1.5 Tj Junction temperature 150 Tstg Storage temperature -50~150 SavantIC Semiconductor Product Specification 2SD560 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=3mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=3mA 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 1 µA IEBO Emitter cut-off current VEB=5V; IC=0 3 mA hFE-1 DC current gain IC=3A ; VCE=2V 2000 hFE-2 DC current gain IC=5A ; VCE=2V 500 100 UNIT V 6000 15000 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A;IB1=-IB2=3mA VCC=50V;RL=16.7? hFE-1 Classifications R O Y 2000-5000 3000-7000 5000-15000 2 1.0 µs 3.5 µs 1.2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SD560