SavantIC Semiconductor Product Specification 2SD425 2SD426 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SB555/556 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2SD425 VCBO Collector-base voltage 140 Emitter-base voltage V Open base 120 2SD426 VEBO V 120 2SD425 Collector-emitter voltage UNIT 140 Open emitter 2SD426 VCEO VALUE Open collector 5 V IC Collector current 12 A IE Emitter current 12 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification 2SD425 2SD426 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD425 V(BR)CEO Collector-emitter breakdown voltage MAX IC=0.1A ;IB=0 Emitter-base breakdown voltage 2SD425 VCEsat TYP. V 120 IE=10mA ;IC=0 5 V IC=7A; IB=0.7A Collector-emitter saturation voltage 2SD426 UNIT 140 2SD426 V(BR)EBO MIN 3.0 V IC=6A; IB=0.6A VBE Base-emitter on voltage IC=7A ; VCE=5V 2.5 V ICBO Collector cut-off current VCB=50V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=5V Transition frequency IC=2A ; VCE=5V fT 2 40 140 5 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD425 2SD426