Inchange Semiconductor Product Specification 2SD425 2SD426 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SB555/556 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2SD425 VCBO Collector-base voltage 140 Open base 2SD426 VEBO Emitter-base voltage V 120 2SD425 Collector-emitter voltage UNIT 140 Open emitter 2SD426 VCEO VALUE V 120 Open collector 5 V IC Collector current 12 A IE Emitter current 12 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD425 V(BR)CEO Collector-emitter breakdown voltage Emitter-base breakdown voltage ICBO IEBO hFE fT Base-emitter on voltage UNIT V 120 IE=10mA ;IC=0 5 V IC=7A; IB=0.7A Collector-emitter saturation voltage 2SD426 VBE MAX IC=0.1A ;IB=0 2SD425 VCEsat TYP. 140 2SD426 V(BR)EBO MIN 3.0 V 2.5 V IC=6A; IB=0.6A IC=7A ; VCE=5V R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Collector cut-off current VCB=50V; IE=0 0.1 mA Emitter cut-off current VEB=5V; IC=0 0.1 mA DC current gain IC=2A ; VCE=5V Transition frequency IC=2A ; VCE=5V 2 40 140 5 MHz Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3