SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD733 2SD733K DESCRIPTION ·With TO-3 package ·Complement to type 2SB697/697K ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2SD733 VCBO Collector-base voltage 140 Emitter-base voltage V Open base 160 2SD733K VEBO V 180 2SD733 Collector-emitter voltage UNIT 160 Open emitter 2SD733K VCEO VALUE Open collector 6 V IC Collector current 12 A ICM Collector current-peak 20 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -40~150 TC=25 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD733 2SD733K CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD733 V(BR)CEO V(BR)CBO Collector-emitter breakdown voltage MAX IC=50mA ;IB=0 160 2SD733 160 Collector-emitter breakdown voltage UNIT V 2SD733K IC=5mA ;IE=0 V 180 Emitter-base breakdown voltage IE=5mA ;IC=0 Collector-emitter saturation voltage IC=6A; IB=0.6A VBE Base-emitter on voltage ICBO VCEsat TYP. 140 2SD733K V(BR)EBO MIN 6 V 2.5 V IC=1A ; VCE=5V 1.5 V Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=-5V 40 hFE-2 DC current gain IC=5A ; VCE=5V 20 Transition frequency IC=1A ; VCE=5V fT hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 2 0.7 320 15 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD733 2SD733K