SavantIC Semiconductor Product Specification 2SD797 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability ·High power dissipation APPLICATIONS ·High power amplifier applications ·High power switching applications ·DC-DC converter applications ·Regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 30 A IB Base current 8 A PC Collector power dissipation 200 W Tj Junction temperature 175 Tstg Storage temperature -65~175 TC=25 SavantIC Semiconductor Product Specification 2SD797 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=15A; IB=3A 1.5 V VBEsat Base-emitter saturation voltage IC=15A; IB=3A 2.5 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 60 hFE-2 DC current gain IC=15A ; VCE=5V 10 COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 400 pF fT Transition frequency IC=1A ; VCE=5V 1.5 MHz 2.5 µs 6.0 µs 1.5 µs 80 UNIT V 200 Switching times ton Turn-on time tstg Storage time tf RL=10@;IB1=-IB2=0.5A; VCC=50V Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD797