SAVANTIC 2SD797

SavantIC Semiconductor
Product Specification
2SD797
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High current capability
·High power dissipation
APPLICATIONS
·High power amplifier applications
·High power switching applications
·DC-DC converter applications
·Regulator applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
30
A
IB
Base current
8
A
PC
Collector power dissipation
200
W
Tj
Junction temperature
175
Tstg
Storage temperature
-65~175
TC=25
SavantIC Semiconductor
Product Specification
2SD797
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=15A; IB=3A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=15A; IB=3A
2.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
60
hFE-2
DC current gain
IC=15A ; VCE=5V
10
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
400
pF
fT
Transition frequency
IC=1A ; VCE=5V
1.5
MHz
2.5
µs
6.0
µs
1.5
µs
80
UNIT
V
200
Switching times
ton
Turn-on time
tstg
Storage time
tf
RL=10@;IB1=-IB2=0.5A;
VCC=50V
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD797