Inchange Semiconductor Product Specification BDW51C Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type BDW52C ・Excellent safe operating area APPLICATIONS ・For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL PARAMETER D N O IC VALUE UNIT 100 V 100 V 5 V Collector current 15 A Collector current-peak 20 A IB Base current 7 A PC Collector power dissipation 125 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.4 ℃/W VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC ICM CONDITIONS Open emitter M E S GE Open base N A H C IN Open collector TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BDW51C Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=2.5A 3.0 V Base-emitter saturation voltage IC=10A; IB=2.5A 2.5 V VBE Base-emitter on voltage IC=5A ; VCE=4V 1.5 V ICEO Collector cut-off current VCE=50V; IB=0 1.0 mA ICBO Collector cut-off current VCB=100V; IE=0 TC=150℃ 0.5 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 DC current gain IC=5A ; VCE=4V VBEsat hFE-1 hFE-2 fT 体 半导 CONDITIONS 固电 DC current gain IN MAX R O T UC IC=10A ; VCE=4V IC=0.5A ; VCE=4V 3 20 UNIT V 2.0 OND 2 TYP. 100 IC M E ES G N A CH Transition frequency MIN mA 150 5 MHz Inchange Semiconductor Product Specification BDW51C Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3