SavantIC Semiconductor Product Specification BU2525A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 12 A ICM Collector current -peak 30 A IB Base current(DC) 8 A IBM Base current -peak 12 A PC Collector power dissipation 125 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BU2525A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 5.0 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A 1.3 V ICES Collector cut-off current VCE=rated ;VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 6 13 26 hFE-2 DC current gain IC=8A ; VCE=5V 5 7 10 Collector capacitance IE=0, VCB=10V;f=1MHz CC CONDITIONS 2 MIN TYP. MAX 13.5 145 UNIT V pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 BU2525A