SavantIC Semiconductor Product Specification BU406 BU407 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BU406 VCBO Collector-base voltage 200 Open base BU407 VEBO V 330 BU406 Collector-emitter voltage Emitter-base voltage UNIT 400 Open emitter BU407 VCEO VALUE V 150 Open collector 6 V IC Collector current 7 A ICM Collector current-Peak 10 A IB Base current 4 A 60 W Ptot Total power dissipation TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 2.08 /W SavantIC Semiconductor Product Specification BU406 BU407 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BU406 MIN TYP. MAX UNIT 200 IC=100mA ; IB=0 BU407 V 150 VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 1.2 V 5 mA 1.0 mA BU406 ICES VCE=400V; VBE=0 Collector cut-off current BU407 VCE=330V; VBE=0 IEBO Emitter cut-off current VEB=6.0V; IC=0 hFE DC current gain IC=2A ; VCE=5V 40 fT Transition frequency IC=0.5A ;VCE=10V;f=1.0MHz 10 COB Output capacitance IE=0 ;VCB=10V;f=1.0MHz Fall time IC=5A ;VCC=40V IB1 =-IB2=0.6A;L=150µH tf 2 120 MHz 80 pF 0.75 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3 BU406 BU407 SavantIC Semiconductor Product Specification BU406 BU407 Silicon NPN Power Transistors 4