SAVANTIC BU508A

SavantIC Semiconductor
Product Specification
BU508A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits of
large screen colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS (TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
8
A
ICM
Collector current (Pulse)
15
A
PC
Collector power dissipation
125
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction case
MAX
1.0
UNIT
/W
SavantIC Semiconductor
Product Specification
BU508A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
10
V
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
700
V
VCE(sat)
Collector-emitter saturation voltage
IC=4.5A; IB=2A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=4.5A; IB=2A
1.3
V
ICES
Collector cut-off current
VCE=1500V; VBE=0
TC=125°C
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
ts
Storage time
tf
Fall time
fT
Transition frequency
IC=4.5A ; VCC=140V
IB=1.8A; LC=0.9mH
LB=3µH
IC=0.1A ; VCE=5V
2
8
7
µs
0.55
µs
7
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
BU508A