SavantIC Semiconductor Product Specification BU208A Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receivers. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V 5 A IC Collector current ICM Collector current-peak 7.5 A IB Base current 0.1 A IBM Base current-peak 2.5 A PT Total power dissipation 150 W Tj Junction temperature 115 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1. 0 /W SavantIC Semiconductor Product Specification BU208A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 700 V 5 V VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V ICES Collector cut-off current VCE=1500V;VBE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain IC=4.5A ; VCE=5V COB Output capacitance IE=0; VCB=10V;f=1MHz fT Transition frequency IC=0.1A ; VCE=15V ts Storage time tf Fall time IC=4.5A ;IB=1.8A LB=10µH 2 8 2.25 125 pF 7 MHz 10 µs 0.7 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU208A