Inchange Semiconductor Product Specification BU508A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 固 Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER EMIC S E G AN R O T UC OND CONDITIONS VALUE UNIT 1200 V VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base 700 V Emitter-base voltage Open collector 10 V Collector current (DC) 8 A ICM Collector current (Pulse) 15 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.0 ℃/W VEBO IC INCH TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification BU508A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=2A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 TC=125°C 1.0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain ts tf fT 导体 半 电 固 Storage time Fall time IC=4.5A ; VCC=140V IB=1.8A; LC=0.9mH LB=3μH 8 R O T UC D N O IC M E S GE N A H INC Transition frequency IC=1A ; VCE=5V IC=0.1A ; VCE=5V 2 7 μs 0.55 μs 7 MHz Inchange Semiconductor Product Specification BU508A Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3