Inchange Semiconductor Product Specification BU508DFI Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage,high speed ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 8 A ICP Collector current (Pulse) 15 A Ptot Total power dissipation 50 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 2.5 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BU508DFI Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A 1.3 V ICES Collector cut-off current VCE=1500V, VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=5.0V; IC=0 300 mA hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=0.1A ; VCE=5V VF Diode forward voltage IF=4A ts Storage time tf Fall time 700 V 8 7 MHz 2.0 IC=4.5A ; VCC=140V IB=1.8A; LB=3mH LC=0.9mH 2 UNIT V 7 μs 0.55 μs Inchange Semiconductor Product Specification BU508DFI Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3