SavantIC Semiconductor Product Specification BUY49P Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High breakdown voltage:VCEO=200V(min) APPLICATIONS ·For high voltage,medium current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A ICM Collector current-Peak 5 A PT Total power dissipation 15 W Tj Junction temperature 150 Tstg Storage temperature -65~150 Ta125 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX UNIT 8.33 /W SavantIC Semiconductor Product Specification BUY49P Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unles otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=20mA ;IB=0 200 VEBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 VCBO Collector-base breakdown voltage IC=100µA ;IE=0 VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 0.2 V VBEsat Base-emitter saturation voltage IC=0.5A; IB=50mA 1.1 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 µA hFE-1 DC current gain IC=20mA ; VCE=2V 30 hFE-2 DC current gain IC=20mA ; VCE=5V 40 hFE-3 DC current gain IC=0.5mA ; VCE=5V 40 Transition frequency IC=0.1A ; VCE=10V 30 Collector outoput capacitance IE=0;f=1MHz ; VCB=10V fT COB CONDITIONS MIN TYP. MAX UNIT V 250 MHz 50 pF 0.8 µs 2.5 µs Switching times resistive load ton Turn-on time toff Turn-off time VCC=20V ,IC=0.5A IB1=-IB2=50mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUY49P