SavantIC Semiconductor Product Specification BUT56 BUT56A Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolut maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BUT56 VCBO Collector-base voltage 400 Open base BUT56A VEBO Emitter-base voltage V 1000 BUT56 Collector-emitter voltage UNIT 800 Open emitter BUT56A VCEO VALUE V 450 Open collector 6 V IC Collector current 8 A ICM Collector current-peak 10 A IBM Base current-peak 4 A Ptot Total power dissipation 100 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting case MAX UNIT 1.25 K/W SavantIC Semiconductor Product Specification BUT56 BUT56A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO PARAMETER Collector-emitter breakdown voltage CONDITIONS BUT56 MIN TYP. MAX UNIT 400 IC=100mA ;LC=125mH BUT56A V 450 Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 2.0 V BUT56 VCE=800V; VBE=0 Tj=150 1.0 2.0 BUT56A VCE=1000V; VBE=0 Tj=150 1.0 2.0 ICES hFE-1 hFE-2 fT Collector cut-off current DC current gain 6 IC=1A ; VCE=5V 15 BUT56 IC=4A ; VCE=5V 5.5 BUT56A IC=3A ; VCE=2V 4 V mA 45 DC current gain Transition frequency IC=0.5A ;VCE=10V;f=1.0MHz 10 MHz Switching times toff Turn-off time tf Fall time IC=4A ;IB1=-IB2=1.25A tp=20µs 2 4 µs 1 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 BUT56 BUT56A