KSD471A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55 ±0.2 14.3 ±0.2 4.5 ±0.2 FEATURES z Complement to KSB564A z Collector Current : IC = 1A z Collector Dissipation : PC = 800mW 3.5 ±0.2 …0.07 0.43 +0.08 0.46 ±0.1 MAXIMUM RATINGS (TA=25 Symbol unless otherwise noted) Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.8 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ (1.27 T yp.) 1: E mitter 2: B as e 3: C ollector 1.25 ±0.2 1 2 3 2.54 ±0.1 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=30V, IE=0 DC current gain hFE VCE=1V, IC=100mA 0.1 70 μA 400 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=0.1A 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A, IB=0.1A 1.2 V Output Capacitance Cob Transition frequency fT VCB=6V, IE=0,f=1MHZ 16 pF VCE=6V, IC=10mA 130 MHz CLASSIFICATION OF hFE Rank Range http://www.SeCoSGmbH.com/ 01-Jun-2007 Rev. A O Y G 70-140 120-240 200-400 Any changing of specification will not be informed individual Page 1 of 2 KSD471A Elektronische Bauelemente NPN Silicon General Purpose Transistor Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 2 of2