SID9960
42A, 40V,RDS(ON)16 mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
TO-251
Description
2.3±0.1
6.6±0.2
5.3±0.2
The SID9960 provide the designer with the best combination
0.5±0.05
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
7.0±0.2
5.6±0.2
1.2±0.3
0.75±0.15
7.0±0.2
Features
0.6±0.1
* Low Gate Charge
0.5±0.1
2.3REF.
* Simple Drive Requirement
G
D
S
* Fast Switching
Dimensions in millimeters
D
Marking Code: 9960
XXXX(Date Code)
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
o
Ratings
Unit
40
V
± 20
V
Continuous Drain Current,VGS@10V
ID@TC=25 C
42
A
Continuous Drain Current,VGS@10V
o
ID@TC=100C
26
A
IDM
195
A
45
W
0.36
W/ C
-55~+150
o
Pulsed Drain Current
1
Total Power Dissipation
o
PD@TC=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
o
C
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
2.8
o
Thermal Resistance Junction-ambient
Max.
Rthj-a
110
o
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SID9960
42A, 40V,RDS(ON)16 mΩ
N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
40
_
BVDS/ Tj
_
0.032
VGS(th)
1.0
_
3.0
V
IGSS
_
_
±100
nA
VGS=±20V
_
_
1
uA
VDS=40V,VGS=0
_
_
25
uA
VDS=32V,VGS=0
_
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
Static Drain-Source On-Resistance
IDSS
RD S (O N )
_
Gate-Drain ("Miller") Charge
Qgd
Input Capacitance
6
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
o
16
_
Qgs
Fall Time
V/ C
18
Gate-Source Charge
Turn-off Delay Time
_
25
_
Rise Time
V
_
Qg
_
_
_
12
_
9
_
110
_
23
_
10
_
1500
_
250
_
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
180
Forward Transconductance
Gfs
_
30
Symbol
Min.
Typ.
Unit
_
_
Total Gate Charge2
Turn-on Delay Time2
Max.
mΩ
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VDS=VGS, ID=250uA
VGS=10V, ID=20A
VGS=4.5V, ID=1 8A
nC
ID=20A
VDS=20V
VGS= 4.5V
VDD=20V
ID=20A
nS
VGS=10V
RG=3.3Ω
RD=1 Ω
pF
VGS=0V
VDS=25V
_
S
VDS=10V, ID=20A
Max.
Unit
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage 2
VSD
_
_
Reverse Recovery Time
Trr
_
22
_
Reverse Recovery Change
Q rr
27.4
_
_
1.3
Test Condition
V
IS=45 A, VGS=0V.
nS
IS=20A, VGS=0V.
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SID9960
Elektronische Bauelemente
42A, 40V,RDS(ON)16 mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4
SID9960
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
42A, 40V,RDS(ON)16 mΩ
N-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 4 of 4