SSF1332E 0.6A, 20V,RDS(ON) 600mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-323 A Description L The SSF1332E provide the designer with the best S 2 3 Top View B 1 Combination of fast switching, low on-resistance and cost-effectiveness. D G J C Features K H Drain Gate * Simple gate drive Min Max A 1.80 2.20 B 1.15 1.35 C 0.80 1.00 D 0.25 0.40 G 1.20 1.40 H 0.00 0.10 J 0.10 0.25 K 0.35 0.50 L 0.59 0.72 S 1.80 2.40 All Dimension in mm D Source * Small package outline Dim * 2KV ESD rating (Per MIL-STD-883D) G Marking : 1332 S Absolute Maximum Ratings Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, [email protected] 3 Continuous Drain Current, [email protected] 1,2 Total Power Dissipation Unit 20 V ±6 V 600 mA o ID@TA=70 C 470 mA IDM 2.5 A 0.35 W 0.003 W/ C -55~+150 o ID@TA=25 C o PD@TA=25 C Linear Derating Factor Operating Junction and Storage Temperature Range Ratings o VGS 3 Pulsed Drain Current Symbol Tj, Tstg o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol Rthj-a Ratings 360 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 SSF1332E 0.6A, 20V,RDS(ON) 600mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gat Thershold Voltage Gate-Source Leakage Current Symbol Min. Typ. Max. Unit BVDSS 20 _ _ V BVDS/ Tj _ 0.02 _ V/ C VGS(th) 0.5 _ 1.2 V VDS=VGS, ID=250uA IGSS _ _ ± 10 uA VGS=± 6V _ _ 1 uA VDS=20V,VGS=0 _ _ 10 uA VDS=16V,VGS=0 _ _ 600 o Drain-Source Leakage Current (Tj=25 C) o Drain-Source Leakage Current (Tj=70 C) StaticDrain-Source On-Resistance 2 IDSS RDS(ON) _ _ 850 1.3 2 0.3 _ 0.5 _ Total Gate Charge 2 Qg _ Gate-Source Charge Qgs _ Gate-Drain ("Miller") Charge Qgd Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Td(ON) _ 4 _ Tr _ 10 _ Td(Off) _ 15 _ Tf _ 2 _ _ 38 60 17 _ 12 _ Ciss Output Capacitance Coss Reverse Transfer Capacitance Forward Transconductance _ _ o mΩ Test Condition VGS=0V, ID=250uA o Reference to 25 C,ID=1mA VGS=4.5V, ID=0.6A VGS=2.5V, ID=0.4A nC ID=0.6A VDS=16V VGS=4.5V VDD=10V ID=0.6A nS VGS=10V RG=3.3Ω RD=16.7Ω pF Crss _ Gfs _ 1 _ S Symbol Min. Typ. Max. Unit _ _ 1.2 V VGS=0V VDS=10V f=1.0MHz VDS=5V, ID=0.6A Source-Drain Diode Parameter 2 Forward On Voltage VSD Test Condition IS=1.6A, VGS=0V. Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board, t≦10Sec. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SSF1332E Elektronische Bauelemente 0.6A, 20V,RDS(ON) 600mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SSF1332E Elektronische Bauelemente 0.6A, 20V,RDS(ON) 600mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4