SSM9973
Elektronische Bauelemente
3.9A, 60V,RDS(ON) 80mΩ
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
S OT -223
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5
Description
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The MMS9973 Provide the designer with the best Combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 Package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage application such as DC/DC conerters.
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D
Features
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* Simple Drive Requirement
* Low Gate Charge
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S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
Pulsed Drain Current
1
V
V
3.9
A
o
ID@TA=70 C
2.5
A
IDM
20
A
2.7
W
0.02
W / oC
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
60
±20
o
Total Power Dissipation
Unit
o
ID@TA=25 C
Continuous Drain Current, VGS@10V
Ratings
Tj, Tstg
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Rthj-a
Ratings
45
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSM9973
3.9A, 60V,RDS(ON) 80mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
Max.
Unit
BVDSS
60
_
_
V
BVDS/ Tj
_
0.06
_
V/ C
VGS(th)
1.0
_
3.0
V
IGSS
_
_
±100
nA
VGS=± 20V
_
_
1
uA
VDS=60V,VGS=0
_
_
25
uA
VDS=48V,VGS=0
_
_
80
o
Drain-Source Leakage Current (Tj=25 C)
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance
2
IDSS
RDS(ON)
_
_
100
8
13
2
_
4
_
Total Gate Charge 2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Td(ON)
_
8
_
Tr
_
4
_
Td(Off)
_
20
_
Tf
_
6
_
_
700
1120
80
_
50
_
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Forward Transconductance
_
_
o
mΩ
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C ,ID=1mA
VDS=VGS, ID=250uA
VGS=10V, ID=3.9A
VGS=4.5V, ID=2A
nC
ID=3.9A
VDS=48V
VGS=4.5V
VDD=30V
ID=1A
nS
VGS=10V
RG=3.3 Ω
RD=30 Ω
pF
VGS=0V
VDS=25V
VDS=10V, ID=3.9A
Crss
_
Gfs
_
3.5
_
S
Symbol
Min.
Typ.
Max.
Unit
_
_
1.2
V
_
28
_
ns
_
35
_
nC
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage
VDS
2
Reverse Recovery Time
Reverse Recovery Charge
Trr
2
Qrr
Test Condition
IS=3.9A, VGS=0V.
Is=3.9A, VGS=0V
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSM9973
Elektronische Bauelemente
3.9A, 60V,RDS(ON) 80mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSM9973
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Circuit
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
3.9A, 60V,RDS(ON) 80mΩ
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4