SSM9971
5A, 60V,RDS(ON) 50mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
SOT-223
The SSM9971 provide the designer with the best
combination of fast switching,low on-resistance,
cost-effectiveness and ruggedized device design.
Features
* Simple Drive Requirement
* Low On-Resistance
REF.
D
Date Code
A
C
D
E
I
H
9 9 7 1
G
G
D
S
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0°
10°
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current, VGS @10V
Continuous Drain Current, VGS @10V
Pulsed Drain Current
1,2
60
V
VGS
±25
V
o
5.0
A
o
ID@TA=70 C
3.2
A
IDM
30
A
2.7
W
0.02
W / oC
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
Unit
VDS
ID@TA=25 C
3
Ratings
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Max.
Rthj-a
Ratings
45
Unit
o
C/W
Any changing of specification will not be informed individual
Page 1 of 4
SSM9971
5A, 60V,RDS(ON) 50mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
60
_
BVDS/ Tj
_
VGS(th)
1.0
_
3.0
V
VDS=VGS, ID=250uA
IGSS
_
_
±100
nA
VGS=±25V
_
_
1
uA
VDS=60V,VGS=0
_
_
25
uA
VDS=48V,VGS=0
_
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=70 C)
Static Drain-Source On-Resistance
2
IDSS
RD S (O N )
Total Gate Charge2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Tr
_
Td(Off)
_
Tf
_
Ciss
_
_
o
_
V/ C
_
60
32.5
_
_
_
9.6
_
10
_
30
_
5.5
_
1658
_
Coss
Reverse Transfer Capacitance
Crss
_
109
Forward Transconductance
Gfs
_
7
Symbol
Min.
156
mΩ
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VGS=10V, ID=5A
VGS=4.5V, ID=2 .5A
nC
8.8
Output Capacitance
Unit
V
50
4.9
_
Td(ON)
_
0.06
_
Max.
ID=5A
VDS=48V
VGS= 10V
VDD=30V
ID=5A
nS
VGS=10V
RG=3.3Ω
RD=6Ω
pF
VGS=0V
VDS=25V
_
S
VDS=10 V, ID=5A
Max.
Unit
_
f=1.0MHz
_
Source-Drain Diode
Parameter
Typ.
Forward On Voltage 2
VSD
_
_
Reverse Recovery Time
Trr
_
29.2
_
48
_
Reverse Recovery Change
Q rr
_
1.2
Test Condition
V
IS=1.6A, VGS=0V.
nS
IS=5 A, VGS=0V.
nC
dl/dt=100A/us
Notes: 1. Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
2
o
3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSM9971
Elektronische Bauelemente
5A, 60V,RDS(ON) 50mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 3 of 4
SSM9971
5A, 60V,RDS(ON) 50mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10ms
120
/W
DC
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4