SMS7401 -2.8A, -30V,RDS(ON) 115mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMS7401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. SOT-23 A L S 1 3 Top View B 2 D G J C Features K H * -30V/-2.8A,RDS(ON)=115m Ω @VGS=-10V * -30V/-2.5A,RDS(ON)=125m Ω @VGS=-4.5V * -30V/-1.5A,RDS(ON)=170m Ω @VGS=-2.5V * -30V/-1.0A,RDS(ON)=240m Ω @VGS=-1.8V Drain Gate Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm Source * Super High Density Cell Design For Extremely Low RDS(ON) * Exceptional On-Resistance And Max. DC Current Capability D Applications * * * * * * * DC/DC Converter Power Management in Notebook DSC LCD Display Inverter Portable Equipment Battery Powered System Load Switch G S *week code: A~Z(1~26),a~z(27~52) Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current@TJ =150 oC o ID@TA= 25 C o ID@TA= 70 C Drain-Source Diode Forward Current IS Pulsed Drain Current IDM Total Power Dissipation Operating Junction and Storage Temperature Range -2.8 -1.4 A - 8 A o 0.33 o PD@TA=70 C 0.21 Tj, Tstg -55~+150 Symbol Ratings PD@TA=25 C A -2.1 W o C Thermal Data Parameter Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Rthj-a 105 Unit o C /W Any changing of specification will not be informed individual Page 1 of 5 SMS7401 -2.8A, -30V,RDS(ON) 115mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Typ. Max. _ _ _ -0.8 VGS(th) -0.4 Gate-Source Leakage Current IGSS Drain-Source Leakage Current IDSS Drain-Source Breakdown Voltage Forward On Voltage Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min. BVDSS -30 VSD RDS(ON) VGS=0V, ID=-250 uA -1.2 V ID=-1.2 A,VGS=0V. _ -1 V VDS=VGS, ID=-250 uA _ _ ±100 nA VGS=±12V,VDS=0V _ _ -1 uA VDS=-24V,VGS=0V _ _ -5 uA VDS=-24V,VGS=0V,Tj=85 oC _ 0.105 0.115 _ 0.125 0.135 _ 0.155 0.17 VGS=-2.5V, ID=-1.5A _ 0.21 0.24 VGS=-1.8V, ID=-1A ID(ON) -4 _ _ Turn-on Delay Time Td(ON) _ 6 _ Tr _ 3.9 _ Td(Off) _ 40 _ Fall Time Tf _ 15 _ Total Gate Charge Qg _ 5.8 _ Gate-Source Chagre Qgs _ 0.8 _ Gate-Drain Chagre Qgd _ 1.5 _ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss _ Gfs _ Turn-off Delay Time Forward Transconductance http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Test Condition V On-State Drain Current Rise Time Unit _ _ 380 55 VGS=-10V, ID=-2.8A Ω A VGS=-4.5V, ID=-2.5A VDS=- 5V,VGS=-4.5V VDD=-15V ID=-1A nS VGEN = -10V RG=3 Ω RL =15 Ω nC VGS=-4.5V VDS=-15V pF VGS=0V VDS=-15V ID=-2A _ _ 40 _ 4 _ f=1.0MHz S VDS=-10V, ID=-2.8A Any changing of specification will not be informed individual Page 2 of 5 SMS7401 Elektronische Bauelemente -2.8A, -30V,RDS(ON) 115mΩ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 5 SMS7401 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A -2.8A, -30V,RDS(ON) 115mΩ P-Channel Enhancement Mode Power Mos.FET Any changing of specification will not be informed individual Page 4 of 5 SMS7401 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A -2.8A, -30V,RDS(ON) 115mΩ P-Channel Enhancement Mode Power Mos.FET Any changing of specification will not be informed individual Page 5 of 5