SST2610 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION z z The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. It is universally used for all commercial-industrial applications. APPLICATIONS z z Low on-resistance Capable of 2.5V gate drive PACKAGE INFORMATION REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 0.30 0.55 0 0.10 0 10 REF. G H I J K L Millimeter Min. Max. 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current [email protected], TA=25℃ 3 Continuous Drain Current [email protected], TA=70℃ Pulsed Drain Current 1,2 Power Dissipation TA=25℃ Linear Derating Factor Operating Junction and Storage Temperature Range Symbol Ratings Unit VDS VGS ID ID ID PD Tj, Tstg 60 ±20 3.0 2.3 10 2 0.016 -55 ~ +150 V V A A A W W/ ℃ ℃ Symbol Ratings Unit RθJA 62.5 ℃ / W THERMAL DATA Parameter Thermal Resistance Junction-ambient 01-June-2005 Rev. A 3 Max. Page 1 of 4 SST2610 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 60 - - V Breakdown Voltage Temperature ΔBVDSS - 0.05 - VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 5.0 - S VDS = 5V, ID=3A IGSS - - ±100 - - 10 - - 25 - - 90 Coefficient /ΔTJ Forward Transconductance Gate Leakage Current Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current (TJ=25℃) Drain-Source Leakage Current (TJ=70℃) Static Drain-Source On-Resistance 2 IDSS RDS(ON) - V/ 120 Qg - 6 10 Gate-Source Charge Qgs - 1.6 - Gate-Drain (“Miller”) Change Qgd - 3 - Td(on) - 6 - Tr - 5 - Td(off) - 16 - Tf - 3 - Input Capacitance Ciss - 490 780 Output Capacitance Coss - 55 - Reverse Transfer Capacitance Crss - 40 - Total Gate Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0, ID = 250uA ℃ Reference to 25℃, ID=1mA VGS= ±20V nA VDS=60V, VGS=0 VDS=48V, VGS=0 mΩ VGS=10V, ID=3A VGS=4.5V, ID=2A ns ID=3A VDS=48V VGS=4.5V ns VDS=30V ID=1A VGS=10V RG=3.3Ω RD=30Ω pF VGS=0V VDS=25V f=1.0MHz ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbo Min. Typ. Max. Unit VSD - - 1.2 V IS = 1.2 A, VGS = 0 V Reverse Recovery Time Trr - 25 - ns IS=3A, VGS=0V Reverse Recovery Charge Qrr - 26 - nC dI/dt=100A/μs Parameter Forward On Voltage2 Notes: Test Conditions 1. Pulse width limited by Max. junction temperature. 2. Pulse width300us, duty cycle ≦ 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board, 156°C/W when mounted on min. copper pad. 01-June-2005 Rev. A Page 2 of 4 SST2610 Elektronische Bauelemente 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 3 of 4 SST2610 Elektronische Bauelemente 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVES (cont’d) F=1.0 MHz 01-June-2005 Rev. A Page 4 of 4